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AT28C64E - 64K (8K x 8) Parallel EEPROMs

General Description

The AT28C64E is a low-power, high-performance 8,192 words by 8-bit nonvolatile electrically erasable and programmable read-only memory with popular, easy-to-use

Key Features

  • Fast Read Access Time.
  • 120 ns.
  • Fast Byte Write.
  • 200 µs.
  • Self-timed Byte Write Cycle.
  • Internal Address and Data Latches.
  • Internal Control Timer.
  • Automatic Clear Before Write.
  • Direct Microprocessor Control.
  • READY/BUSY Open Drain Output.
  • DATA Polling.
  • Low Power.
  • 30 mA Active Current.
  • 100 µA CMOS Standby Current.
  • High Reliability.
  • Endurance: 105 Cycles.

📥 Download Datasheet

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Other Datasheets by Atmel (now Microchip Technology)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs • Self-timed Byte Write Cycle – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write • Direct Microprocessor Control – READY/BUSY Open Drain Output – DATA Polling • Low Power – 30 mA Active Current – 100 µA CMOS Standby Current • High Reliability – Endurance: 105 Cycles – Data Retention: 10 Years • 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-wide Pinout • Industrial Temperature Ranges • Green (Pb/Halide-Free) Packaging Option 64K (8K x 8) Parallel EEPROMs AT28C64E 1.